cha7114 rohs compliant ref : dscha7114-0197 - 16 jul 10 1/8 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - bp46 - 91401 orsay cedex france tel.: +33 (0) 1 69 33 03 08 - fax : +33 (0) 1 69 33 03 09 x band high power amplifier gaas monolithic microwave ic description the cha7114 is a monolithic two-stage gaas high power amplifier designed for x band applications. this device is manufactured using a ums 0.25m power phemt process, including, via holes through the substrate and air bridges. to simplify the assembly process: the backside of the chip is both rf and dc grounded bond pads and back side are gold plated for compatibility with eutectic die attach method and thermo-compression bonding process. main features 0.25m power phemt technology 8.5C11.5ghz frequency range 8w output power @ 4dbcp high pae: > 40% @ 4dbcp 20db nominal gain quiescent bias point: vd = 8v, id = 2a chip size: 4.41 x 3.31 x 0.07mm in out vg2 vd2 vg1 vd1 vg2 vd2 vg1 vd1 in out vg2 vd2 vg1 vd1 vg2 vd2 vg1 vd1 main characteristics tamb = +25c (tamb is the back-side of the chip) vd = 8v, id (quiescent) = 2a, pulse width = 25s, d uty cycle = 10% symbol parameter min typ max unit top operating temperature range -40 +80 c fop operating frequency range 8.5 11.5 ghz p_4dbcp output power @ 4dbcp @ 25c 8 w g small signal gain @ 25c 20 db esd protections: electrostatic discharge sensitive devi ce. observe handling precautions! 10 15 20 25 30 35 40 45 50 8 8,5 9 9,5 10 10,5 11 11,5 12 frequency (ghz) pout (dbm) & pae (%) & gain (db) pae @ 4dbc pout @ 4dbc linear gain pulse : 25s 10%
cha7114 x-band high power amplifier ref. : dscha7114-0197 - 16 jul 10 2/8 specification s subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 electrical characteristics tamb = 25c, vd = 8v, id (quiescent) = 2a, pulse wi dth = 25s, duty cycle=10% symbol parameter min typ max unit fop operating frequency 8.5 11.5 ghz g small signal gain 17.5 20 23 db g_t small signal gain variation versus temperature -0.033 db/c rlin input return loss 8 10 db rlout output return loss 6 8 db psat saturated output power 39.8 dbm psat_t saturated output power variation versus temperature -0.008 db/c p_4dbcp output power @ 4dbcp (2) 38 39 dbm pae_4dbcp power added efficiency @ 4dbcp 36 42 % id supply drain current 2.3 2.6 a vd1, vd2 drain supply voltage (2) 8.0 8.5 v id_q supply quiescent drain current (1) 2.0 a vg1, vg2 gate power supply voltage -4.0 v top operating temperature range -40 +80 c (1) parameter to be adjusted by tuning of vg (2) 0.5v variation on vd leads to around 0.4db vari ation of the output power (impact on robustness see maximum ratings) absolute maximum ratings (1) tamb = 25c symbol parameter values unit cmp compression level (2) 6 db vd drain power supply voltage (3) 10 v id drain power supply quiescent current 2.5 a id_sat drain power supply current in saturation 3 a vg gate power supply voltage -8 v tj maximum junction temperature (4) 175 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) for higher compression the level limit can be i ncreased by decreasing the voltage vd using the rate 0.5v/dbcp (3) without rf input power (4) equivalent thermal resistance to backside: 5.6 c/w for backside temp. of 80c. [ junction temperature comes from: tj = tbackside + etrb x (dissipated power) where etrb stands for e quivalent t hermal r esistance to b ackside. ]
x band high power amplifier cha7114 ref : dscha7114-0197 - 16 jul 10 3/8 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 typical measured characteristics measurements on jig : vd = 8v, vg = -4.0v, id (quiescent) = 2.2a, pulse w idth = 25s, duty cycle = 10% 10 12 14 16 18 20 22 24 26 28 30 8 8,5 9 9,5 10 10,5 11 11,5 12 frequency (ghz) linear gain (db) -40c 80c 20c linear gain versus frequency and temperature 32 33 34 35 36 37 38 39 40 41 42 8 8,5 9 9,5 10 10,5 11 11,5 12 frequency (ghz) pout (dbm) -40c 80c 20c output power @ 4dbcp versus frequency and temperatu re
cha7114 x-band high power amplifier ref. : dscha7114-0197 - 16 jul 10 4/8 specification s subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 30 32 34 36 38 40 42 44 46 48 50 8 8,5 9 9,5 10 10,5 11 11,5 12 frequency (ghz) pae (%) -40c 80c 20c pae @ 4dbcp versus frequency and temperature 0 0,5 1 1,5 2 2,5 3 3,5 4 8 8,5 9 9,5 10 10,5 11 11,5 12 frequency (ghz) id (a) -40c 80c 20c id @ 4dbcp versus frequency and temperature
x band high power amplifier cha7114 ref : dscha7114-0197 - 16 jul 10 5/8 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 25 27 29 31 33 35 37 39 41 -1 0 1 2 3 4 5 6 7 8 9 compression (db) pout (dbm) 8ghz 8.4ghz 8.8ghz 9.2ghz 9.6ghz 10ghz 10.4ghz 10.8ghz 11.2ghz 11.6ghz 12ghz output power @ 25c versus compression and frequenc y 0 10 20 30 40 50 60 -1 0 1 2 3 4 5 6 7 8 9 compression (db) pae (%) 8ghz 8.4ghz 8.8ghz 9.2ghz 9.6ghz 10ghz 10.4ghz 10.8ghz 11.2ghz 11.6ghz 12ghz pae @ 25c versus compression and frequency
cha7114 x-band high power amplifier ref. : dscha7114-0197 - 16 jul 10 6/8 specification s subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 chip mechanical data and pin references chip width and length are given with a tolerance of +/- 35m chip thickness = 70m +/- 10m hf pads (1, 10) = 118m x 196m dc pads (3, 4, 5, 6, 7, 12, 13, 14, 15, 16) = 96m x 96m dc pads (8, 11) = 186m x 96 m pin number pin name description 2, 9 not connected 3, 7, 12, 16 g1, g2 not connected 1 in input rf port 4, 6, 13, 15 vg1r, vg2r vg: negative supply voltage (through div ided bridge network) 5, 8, 11, 14 vd1, vd2 vd: positive supply voltage 10 out output rf port
x band high power amplifier cha7114 ref : dscha7114-0197 - 16 jul 10 7/8 specifications subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 bonding recommendations port connection external capacitor in inductance (lbonding) = 0.3nh 2 gold wires bondings (550 m max) out inductance (lbonding) = 0.3nh 2 gold wires bondings (550m max) vd1, vd2 inductance 1nh c1 ~ 100pf vg1r, vg2r inductance 1nh c1 ~ 100pf c2 ~ 10nf assembly recommendations (drain voltage pulsed mode operation) vg: gate supply voltage vd: drain supply voltage c1=100pf c2=10nf vg vd vd vg c1=100pf c2=10nf vg vd vd vg in out
cha7114 x-band high power amplifier ref. : dscha7114-0197 - 16 jul 10 8/8 specification s subject to change without notice route dpartementale 128, bp46 - 91401 orsay cedex - france tel.: +33 (0) 1 69 33 03 08 - fax: +33 (0) 1 69 33 03 09 ordering information chip form : CHA7114-99F/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorized for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s
|
